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notes through are on page 8 www.irf.com 1 IRFB42N20DPBF smps mosfet hexfet power mosfet v dss r ds(on) max i d 200v 0.055 ? 44a pd- 95470 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 44 i d @ t c = 100c continuous drain current, v gs @ 10v 31 a i dm pulsed drain current 180 p d @t a = 25c power dissipation 2.4 w p d @t c = 25c power dissipation 330 linear derating factor 2.2 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 2.5 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings high frequency dc-dc converters motor control uninterrutible power supplies benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current to-220ab parameter typ. max. units r jc junction-to-case ??? 0.45 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance lead-free
IRFB42N20DPBF 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 21 ??? ??? s v ds = 50v, i d = 26a q g total gate charge ??? 91 140 i d = 26a q gs gate-to-source charge ??? 24 36 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? 43 65 v gs = 10v, t d(on) turn-on delay time ??? 18 ??? v dd = 100v t r rise time ??? 69 ??? i d = 26a t d(off) turn-off delay time ??? 29 ??? r g = 1.8 ? t f fall time ??? 32 ??? v gs = 10v c iss input capacitance ??? 3430 ??? v gs = 0v c oss output capacitance ??? 530 ??? v ds = 25v c rss reverse transfer capacitance ??? 100 ??? pf ? = 1.0mhz c oss output capacitance ??? 5310 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 210 ??? v gs = 0v, v ds = 160v, ? = 1.0mhz c oss eff. effective output capacitance ??? 400 ??? v gs = 0v, v ds = 0v to 160v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 510 mj i ar avalanche current ??? 26 a e ar repetitive avalanche energy ??? 33 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 26a, v gs = 0v t rr reverse recovery time ??? 220 330 ns t j = 25c, i f = 26a q rr reverse recoverycharge ??? 1860 2790 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 44 180 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.26 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.055 ? v gs = 10v, i d = 26a v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current
IRFB42N20DPBF www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 44a
IRFB42N20DPBF 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 140 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 26a v = 40v ds v = 100v ds v = 160v ds 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRFB42N20DPBF www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d
IRFB42N20DPBF 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 175 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 11a 19a 26a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
IRFB42N20DPBF www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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IRFB42N20DPBF 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. i sd 26a, di/dt 110a/s, v dd v (br)dss , t j 175c
starting t j = 25c, l = 1.45mh r g = 25 ? , i as = 26a, v gs =10v pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 7/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector

example: in the as sembly line "c" t his is an irf1010 lot code 1789 as s emble d on ww 19, 1997 part number assembly lot code dat e code year 7 = 1997 line c wee k 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free"

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